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Chemisorption of group-III metals on the Si(111) and Ge(111) surfaces: An ab initio study

机译:Si(111)和Ge(111)表面上III类金属的化学吸附:从头算研究

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摘要

Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption picture may be suggested. Group-III metals exhibit a similar behavior and the same is true for Si(111) and Ge(111) surfaces when chemisorption is considered.
机译:通过从头算Hartree-Fock方法(包括非经验性伪势)和使用簇模型模拟表面,研究了III型金属原子在Si(111)和Ge(111)上的化学吸附。通过使用X4H9,X4H7和X6H9(X = Si,Ge)群集模型,已经考虑了三个不同的高对称站点(顶部,月食和开放)。第一步,使用了理想的表面几何形状。还考虑了化学吸附时金属诱导的重建。获得了平衡距离,结合能和振动频率,并将其与可用的实验数据进行了比较。从结合能的角度考虑,最上面和最下面的部位似乎是最有利的部位,因此可能会提出共吸附图。 III族金属表现出相似的行为,当考虑化学吸附时,对于Si(111)和Ge(111)表面也是如此。

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